EP3SE260F1517C3N vs EP3SE260F1517C4N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260F1517C3N sa pamamagitan ng Intel at EP3SE260F1517C4N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260F1517C3N | EP3SE260F1517C4N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | NRND |
| Family | Stratix III E | Field-Programmable Gate Array (FPGA) |
| Logic Elements | 254,400 | 255,000 |
| Embedded Memory | 16,672,768 bits (16.7 Mbits) | 16,672,768 bits |
| User I/Os | 976 | — |
| DSP Blocks (18x18 Multipliers) | 816 | — |
| M9K Memory Blocks | 1,040 | — |
| Maximum Transceiver Data Rate | 600 Mbps | 12.5 Gbps |
| PLLs | 4 | — |
| Global Clock Networks | 16 | — |
| Packhaging | 1517-BBGA (FCBGA) | 1517-BBGA, FCBGA |
| Process Technology | 65 nm TSMC low-power CMOS | — |
| Speed Grade | C3 (commercial) | — |
| Temperature ng Junction na Operasyon | 0 C to +85 C (commercial) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| External Memory Interfaces | DDR3, DDR2, QDRII+, RLDRAM2 | — |
| Series | — | Stratix® III E |
| Logic Array Blocks (LABs) | — | 10,200 |
| Maximum User I/Os | — | 976 |
| Temperature na Operasyon | — | 0°C to 85°C |
| Core Voltage | — | 0.9 V |
| Process Node | — | 65 nm |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |
| Lead Free | — | [DATA_NEEDED: lead-free status] |