EP3SE260F1517C3N vs EP3SE260F1517C4N 比較
詳細並排比較 EP3SE260F1517C3N 由 Intel 與 EP3SE260F1517C4N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | EP3SE260F1517C3N | EP3SE260F1517C4N |
|---|---|---|
| 品牌 | Intel | Intel |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 最後購買 | NRND |
| Family | Stratix III E | Field-Programmable Gate Array (FPGA) |
| Logic Elements | 254,400 | 255,000 |
| Embedded Memory | 16,672,768 bits (16.7 Mbits) | 16,672,768 bits |
| User I/Os | 976 | — |
| DSP Blocks (18x18 Multipliers) | 816 | — |
| M9K Memory Blocks | 1,040 | — |
| Maximum Transceiver Data Rate | 600 Mbps | 12.5 Gbps |
| PLLs | 4 | — |
| Global Clock Networks | 16 | — |
| 封裝 | 1517-BBGA (FCBGA) | 1517-BBGA, FCBGA |
| Process Technology | 65 nm TSMC low-power CMOS | — |
| Speed Grade | C3 (commercial) | — |
| 工作接面溫度 | 0 C to +85 C (commercial) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| External Memory Interfaces | DDR3, DDR2, QDRII+, RLDRAM2 | — |
| Series | — | Stratix® III E |
| Logic Array Blocks (LABs) | — | 10,200 |
| Maximum User I/Os | — | 976 |
| 工作溫度 | — | 0°C to 85°C |
| Core Voltage | — | 0.9 V |
| Process Node | — | 65 nm |
| MSL 等級 | — | [DATA_NEEDED: MSL level] |
| Lead Free | — | [DATA_NEEDED: lead-free status] |