H5AN4G8NBJR-PBC vs H5AN4G8NBJR-UHI Perbandingan
Perbandingan bersamaan detil H5AN4G8NBJR-PBC dari SK hynix dan H5AN4G8NBJR-UHI dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5AN4G8NBJR-PBC | H5AN4G8NBJR-UHI |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Memory Density | 4 Gbit | — |
| Organisasi | 512M x 8 | 512M x 8 |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Tipe Antarmuka | Parallel, JEDEC DDR4 | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Speed Grade | PBC | DDR4-2400 (PC4-19200) |
| Clock Frequency | [DATA_NEEDED: Clock Frequency] | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Paket | 78-ball FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Normal Operating Case Temperature | 0C to 85C | — |
| Extended Temperature Range | up to 95C case (with increased refresh) | — |
| Lead Free | Yes | — |
| Bebas Halogen | Yes | — |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC | Self-refresh and auto-refresh support |
| Density | — | 4 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Grade | — | Industrial (-UHI suffix) |
| Laju Data | — | 2400 MT/s |
| Antarmuka | — | JEDEC DDR4 SDRAM |
| Bank Architecture | — | DDR4 bank group architecture |
| Termination | — | On-die termination (ODT) |
| Suhu Kerja | — | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | — | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |
| Level MSL | — | [DATA_NEEDED: moisture sensitivity level] |