H5AN4G8NBJR-VKI vs H5AN4G8NBJR-VKIR Perbandingan

Perbandingan bersamaan detil H5AN4G8NBJR-VKI dari SK hynix dan H5AN4G8NBJR-VKIR dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5AN4G8NBJR-VKI H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI - 4Gb DDR4 SDRAM x8 2666Mbps | SK hynix

H5AN4G8NBJR-VKI ✓ Aktif
SK hynix
H5AN4G8NBJR-VKIR H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN4G8NBJR-VKI H5AN4G8NBJR-VKIR
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 4 Gb 4 Gb
Organisasi 512M x 8 512M x 8
Laju Data 2666 Mbps 2666 Mbps per pin
Tegangan Pemuat 1.2 V —
I/O Voltage 1.2 V (SSTL12) —
Paket FBGA-78 78-ball FBGA
Tipe Mounting Surface Mount Surface Mount
Speed Grade V (2666) —
Temperature Grade Industrial (I suffix) —
Architecture CMOS, 8n prefetch, bank groups —
Termination On-Die Termination (ODT) —
DBI Support Yes (Data Bus Inversion / DM) —
Latensi CAS [DATA_NEEDED: CAS Latency] [DATA_NEEDED: CAS latency]
Suhu Kerja [DATA_NEEDED: Operating Temperature] —
Refresh [DATA_NEEDED: Refresh specification] [DATA_NEEDED: refresh interval specification]
Status RoHS [DATA_NEEDED: RoHS Status] —
Supply Voltage (VDD) — 1.2 V
Operating Temperature (Industrial) — -40C to +85C (case)
Extended Temperature Range — +85C to +95C (case, per datasheet conditions)
Technology — CMOS DRAM
Product Family — H5AN4G4/6/8NBJR series
Speed Grade Code — -VKI
Packing Suffix — R (Tape & Reel)
VPP Supply — [DATA_NEEDED: VPP supply voltage]
Package Dimensions — [DATA_NEEDED: package dimensions]

Spek dan Sumber

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