H5AN4G8NBJR-VKIR vs H5AN4G8NBJR-PBC Perbandingan

Perbandingan bersamaan detil H5AN4G8NBJR-VKIR dari SK hynix dan H5AN4G8NBJR-PBC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5AN4G8NBJR-VKIR H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix

H5AN4G8NBJR-VKIR ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN4G8NBJR-VKIR H5AN4G8NBJR-PBC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 4 Gb —
Organisasi 512M x 8 512M x 8
Laju Data 2666 Mbps per pin —
Supply Voltage (VDD) 1.2 V —
Paket 78-ball FBGA 78-ball FBGA
Tipe Mounting Surface Mount Surface Mount
Operating Temperature (Industrial) -40C to +85C (case) —
Extended Temperature Range +85C to +95C (case, per datasheet conditions) up to 95C case (with increased refresh)
Technology CMOS DRAM —
Product Family H5AN4G4/6/8NBJR series —
Speed Grade Code -VKI —
Packing Suffix R (Tape & Reel) —
VPP Supply [DATA_NEEDED: VPP supply voltage] —
Latensi CAS [DATA_NEEDED: CAS latency] —
Package Dimensions [DATA_NEEDED: package dimensions] —
Refresh [DATA_NEEDED: refresh interval specification] 8n prefetch, standard/auto refresh per DDR4 JEDEC
Memory Density — 4 Gbit
Tipe Antarmuka — Parallel, JEDEC DDR4
Supply Voltage VDD — 1.2 V
Supply Voltage VDDQ — 1.2 V
Speed Grade — PBC
Clock Frequency — [DATA_NEEDED: Clock Frequency]
CAS Latency (CL) — [DATA_NEEDED: CAS Latency]
Normal Operating Case Temperature — 0C to 85C
Lead Free — Yes
Bebas Halogen — Yes

Spek dan Sumber

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