H5AN8G8NCJR-VKI vs H5AN8G8NCJR-VKC Perbandingan

Perbandingan bersamaan detil H5AN8G8NCJR-VKI dari SK hynix dan H5AN8G8NCJR-VKC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5AN8G8NCJR-VKI H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix

H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix

H5AN8G8NCJR-VKI ✓ Aktif
SK hynix
H5AN8G8NCJR-VKC H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5AN8G8NCJR-VKI H5AN8G8NCJR-VKC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM (volatile)
Ukuran Memori 8 Gb 8 Gbit
Memory Organization 1G x8 1G x 8
Laju Data 2666 Mbps 2666 Mbps/pin
Tegangan Pemuat 1.2 V —
Antarmuka Parallel Parallel (DDR4)
Memory Format DRAM —
Volatile Yes —
Paket FBGA-78 FBGA-78 (78-ball fine-pitch BGA)
Tipe Mounting Surface Mount Surface Mount
Grade Industrial (I suffix) —
Suhu Kerja [DATA_NEEDED: Operating Temperature] 0C to +85C
Technology CMOS —
Product Family H5AN8G8NCJR-xxC/xI DDR4 SDRAM —
Packaging Tray —
Product Status Active —
Status RoHS [DATA_NEEDED: RoHS Status] Compliant
Clock Frequency — 1.6 GHz
Supply Voltage (VDD) — 1.14 V to 1.26 V (1.2 V class)
Operating Current (typ) — 30 mA
Standby Current (typ) — 3 mA
Auto Self-Refresh — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination (ODT) — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Precharge — Yes
Latensi CAS — [DATA_NEEDED: CAS Latency]
Refresh Rate — [DATA_NEEDED: refresh period]

Spek dan Sumber

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