H5ANAG6NAMR-UHC vs H5ANAG6NCR-RDC Perbandingan

Perbandingan bersamaan detil H5ANAG6NAMR-UHC dari SK hynix dan H5ANAG6NCR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum H5ANAG6NAMR-UHC H5ANAG6NCR-RDC
Merek SK hynix SK hynix
Kategori Memory ICs Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Memory Density 16 Gbit (2 GB) —
Organisasi 1G x 16 1G x 16
Speed Grade / Data Rate DDR4-2400 (UHC bin, PC4-19200) —
Supply Voltage (VDD) 1.2 V 1.2 V
Architecture CMOS DDR4 with bank groups —
Power Class Normal Power —
Paket FBGA-96 (PBGA96) 96-ball FBGA
Tipe Mounting Surface Mount (BGA solder ball) Surface Mount
Suhu Kerja [DATA_NEEDED: operating temperature range] [DATA_NEEDED: Operating Temperature Range]
Refresh Self-refresh and auto-refresh (DDR4 standard 64 ms) —
Latensi CAS [DATA_NEEDED: CL for UHC bin] —
Tipe Antarmuka Parallel, synchronous, double data rate —
Available Speed Bins (family) PB / RD / TF / UH / VK —
Application Class Main memory, embedded, industrial —
Status RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Status Lingkungan Hidup Active production —
Ukuran Memori — 16 Gb (2 GB)
Laju Data — 3200 Mbps (PC4-25600 class)
Package Body — Rectangular, 8 mm width
Maximum Standby Current — 0.074 A
Number of Terminals (Balls) — 96
Auto Self-Refresh — Yes
Auto Precharge — Yes
Asynchronous Reset — Yes
Data Mask (DM) Function — Yes
Dynamic On-Chip Termination (ODT) — Yes
ZQ Calibration — Yes
CRC Function — Yes
Write Leveling — Yes
Refresh Interval — [DATA_NEEDED: Refresh Interval]

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