H5ANAG6NBJR-UHC vs H5ANAG6NAMR-UHC Perbandingan

Perbandingan bersamaan detil H5ANAG6NBJR-UHC dari SK hynix dan H5ANAG6NAMR-UHC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

SK hynix
H5ANAG6NBJR-UHC H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum H5ANAG6NBJR-UHC H5ANAG6NAMR-UHC
Merek SK hynix SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 4 Gb —
Organisasi 256M x 16 1G x 16
Antarmuka DDR4 (CMOS) —
Paket PBGA96 / FBGA-96 (TFBGA) FBGA-96 (PBGA96)
Package Dimensions 13 mm length (per JESD-30 R-PBGA-B96) —
Access Mode Multi Bank, Page Burst —
Suhu Kerja -40C to +95C [DATA_NEEDED: operating temperature range]
Refresh Auto / Self Refresh Self-refresh and auto-refresh (DDR4 standard 64 ms)
Data Mask Supported (DM function) —
Asynchronous Reset Supported —
On-Chip Termination Dynamic ODT —
ZQ Calibration Supported —
Write Leveling Supported —
CRC Supported —
Supply Voltage Class DDR4 (1.2 V class) —
Status RoHS RoHS Compliant [DATA_NEEDED: RoHS status]
REACH Compliance Compliant —
ECCN EAR99 —
HTS Code 8542.32.00.36 —
Latensi CAS [DATA_NEEDED: CAS Latency] [DATA_NEEDED: CL for UHC bin]
Max Data Rate [DATA_NEEDED: Max Data Rate] —
Memory Density — 16 Gbit (2 GB)
Speed Grade / Data Rate — DDR4-2400 (UHC bin, PC4-19200)
Supply Voltage (VDD) — 1.2 V
Architecture — CMOS DDR4 with bank groups
Power Class — Normal Power
Tipe Mounting — Surface Mount (BGA solder ball)
Tipe Antarmuka — Parallel, synchronous, double data rate
Available Speed Bins (family) — PB / RD / TF / UH / VK
Application Class — Main memory, embedded, industrial
Status Lingkungan Hidup — Active production

Spek dan Sumber

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