H5ANAG6NBJR-UHC vs H5ANAG6NAMR-UHC 比較
詳細並排比較 H5ANAG6NBJR-UHC 由 SK hynix 與 H5ANAG6NAMR-UHC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG6NBJR-UHC | H5ANAG6NAMR-UHC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gb | — |
| 組織 | 256M x 16 | 1G x 16 |
| 介面 | DDR4 (CMOS) | — |
| 封裝 | PBGA96 / FBGA-96 (TFBGA) | FBGA-96 (PBGA96) |
| Package Dimensions | 13 mm length (per JESD-30 R-PBGA-B96) | — |
| Access Mode | Multi Bank, Page Burst | — |
| 工作溫度 | -40C to +95C | [DATA_NEEDED: operating temperature range] |
| Refresh | Auto / Self Refresh | Self-refresh and auto-refresh (DDR4 standard 64 ms) |
| Data Mask | Supported (DM function) | — |
| Asynchronous Reset | Supported | — |
| On-Chip Termination | Dynamic ODT | — |
| ZQ Calibration | Supported | — |
| Write Leveling | Supported | — |
| CRC | Supported | — |
| Supply Voltage Class | DDR4 (1.2 V class) | — |
| RoHS 狀態 | RoHS Compliant | [DATA_NEEDED: RoHS status] |
| REACH Compliance | Compliant | — |
| ECCN | EAR99 | — |
| HTS Code | 8542.32.00.36 | — |
| CAS 延遲 | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CL for UHC bin] |
| Max Data Rate | [DATA_NEEDED: Max Data Rate] | — |
| Memory Density | — | 16 Gbit (2 GB) |
| Speed Grade / Data Rate | — | DDR4-2400 (UHC bin, PC4-19200) |
| Supply Voltage (VDD) | — | 1.2 V |
| Architecture | — | CMOS DDR4 with bank groups |
| Power Class | — | Normal Power |
| 安裝類型 | — | Surface Mount (BGA solder ball) |
| 介面類型 | — | Parallel, synchronous, double data rate |
| Available Speed Bins (family) | — | PB / RD / TF / UH / VK |
| Application Class | — | Main memory, embedded, industrial |
| 生命週期狀態 | — | Active production |