H5ANAG6NBJR-UHC vs H5ANAG6NAMR-UHC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG6NBJR-UHC disebabkan oleh SK hynix dan H5ANAG6NAMR-UHC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

SK hynix
H5ANAG6NBJR-UHC H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC - 4Gb DDR4 SDRAM x16 | SK Hynix

H5ANAG6NBJR-UHC ✓ Aktif

Pengandingan Spesifikasi

Parametr H5ANAG6NBJR-UHC H5ANAG6NAMR-UHC
Merek SK hynix SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 4 Gb —
Organisasi 256M x 16 1G x 16
Antaramuka DDR4 (CMOS) —
Kemasan PBGA96 / FBGA-96 (TFBGA) FBGA-96 (PBGA96)
Package Dimensions 13 mm length (per JESD-30 R-PBGA-B96) —
Access Mode Multi Bank, Page Burst —
Suhu Operasi -40C to +95C [DATA_NEEDED: operating temperature range]
Refresh Auto / Self Refresh Self-refresh and auto-refresh (DDR4 standard 64 ms)
Data Mask Supported (DM function) —
Asynchronous Reset Supported —
On-Chip Termination Dynamic ODT —
ZQ Calibration Supported —
Write Leveling Supported —
CRC Supported —
Supply Voltage Class DDR4 (1.2 V class) —
Status RoHS RoHS Compliant [DATA_NEEDED: RoHS status]
REACH Compliance Compliant —
ECCN EAR99 —
HTS Code 8542.32.00.36 —
Latensi CAS [DATA_NEEDED: CAS Latency] [DATA_NEEDED: CL for UHC bin]
Max Data Rate [DATA_NEEDED: Max Data Rate] —
Memory Density — 16 Gbit (2 GB)
Speed Grade / Data Rate — DDR4-2400 (UHC bin, PC4-19200)
Supply Voltage (VDD) — 1.2 V
Architecture — CMOS DDR4 with bank groups
Power Class — Normal Power
Jenis Pemasangan — Surface Mount (BGA solder ball)
Jenis Antaramuka — Parallel, synchronous, double data rate
Available Speed Bins (family) — PB / RD / TF / UH / VK
Application Class — Main memory, embedded, industrial
Status Lingkungan Hidup — Active production

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