H5ANAG6NCMR-XNI vs H5ANAG6NCJR-XN Perbandingan
Perbandingan bersamaan detil H5ANAG6NCMR-XNI dari SK hynix dan H5ANAG6NCJR-XN dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5ANAG6NCMR-XNI | H5ANAG6NCJR-XN |
|---|---|---|
| Merek | SK hynix | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM (volatile DRAM) | DDR4 SDRAM |
| Ukuran Memori | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Laju Data | 3200 Mbps (DDR4-3200, XN speed bin) | 3200 Mbps/pin (DDR4-3200) |
| Tegangan Pemuat | 1.2 V | — |
| Technology | CMOS Double Data Rate IV Synchronous DRAM | — |
| Power Class | Normal Power | — |
| Paket | FBGA-96 | FBGA-96 (96-ball) |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Antarmuka | Parallel (DDR4) | — |
| Product Status | Active | — |
| Application Domain | Main memory, industrial controllers, computing modules, consumer electronics | — |
| Memory Format | DRAM | — |
| Speed Bin Family | UH/VK/WM/XN | — |
| Suhu Kerja | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| VPP Supply Voltage | [DATA_NEEDED: VPP Supply Voltage] | — |
| Level MSL | [DATA_NEEDED: MSL Level] | — |
| Density | — | 16 Gbit (1G x 16) |
| Organisasi | — | 1G x 16 |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V |
| Package Width | — | 8 mm |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask (DM) | — | Yes |
| Dynamic On-Chip Termination (ODT) | — | Yes |
| ZQ Calibration | — | Yes |
| CRC (Command/Address) | — | Yes |
| Write Leveling | — | Yes |
| Maximum Standby Current | — | 0.074 A (per Vyrian listing) |
| Status RoHS | — | Compliant |
| Latensi CAS | — | [DATA_NEEDED: CAS latency for -XN speed grade] |