H5ANAG8NBJR-PBC vs H5ANAG8NBJR-VKC Perbandingan

Perbandingan bersamaan detil H5ANAG8NBJR-PBC dari SK hynix dan H5ANAG8NBJR-VKC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum H5ANAG8NBJR-PBC H5ANAG8NBJR-VKC
Merek SK hynix SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Tipe Memori DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit (2 GB) 16 Gbit
Organisasi x8 2G x 8
Supply Voltage (VDD) 1.2 V —
Speed Grade / Data Rate PBC suffix, DDR4-2666 class —
Paket FBGA-78 (7.5 mm x 11 mm) FBGA-78
Tipe Mounting Surface Mount Surface Mount
Bank Architecture 16 banks in 4 bank groups (DDR4 standard) —
Prefetch 8n —
Tipe Antarmuka Parallel, SSTL12 —
Suhu Kerja [DATA_NEEDED: operating temperature range] 0C to +85C
CAS Latency (typical bin) [DATA_NEEDED: CAS latency] —
Refresh Self refresh, 1x/2x/4x refresh modes —
Die Revision BJR —
Status RoHS Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) Compliant, Lead-Free and Halogen-Free
Level MSL [DATA_NEEDED: moisture sensitivity level] —
Standard Package Quantity [DATA_NEEDED: standard quantity] —
Speed Grade — DDR4-2666 (2666 Mbps/pin)
Tegangan Pemuat — 1.14 V to 1.26 V (VDDQ)
Clock Frequency — 1.6 GHz (internal interface per distributor data)
Standby Current — 30 mA (operating, per distributor listing)
Auto Self-Refresh — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Precharge — Yes
Refresh Interval — [DATA_NEEDED: tREFI refresh interval]

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