H5ANAG8NBJR-PBC vs H5ANAG8NBJR-VKC Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci H5ANAG8NBJR-PBC disebabkan oleh SK hynix dan H5ANAG8NBJR-VKC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr H5ANAG8NBJR-PBC H5ANAG8NBJR-VKC
Merek SK hynix SK hynix
Kategori DRAM Memory ICs
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan DDR4 SDRAM DDR4 SDRAM
Density 16 Gbit (2 GB) 16 Gbit
Organisasi x8 2G x 8
Supply Voltage (VDD) 1.2 V —
Speed Grade / Data Rate PBC suffix, DDR4-2666 class —
Kemasan FBGA-78 (7.5 mm x 11 mm) FBGA-78
Jenis Pemasangan Surface Mount Surface Mount
Bank Architecture 16 banks in 4 bank groups (DDR4 standard) —
Prefetch 8n —
Jenis Antaramuka Parallel, SSTL12 —
Suhu Operasi [DATA_NEEDED: operating temperature range] 0C to +85C
CAS Latency (typical bin) [DATA_NEEDED: CAS latency] —
Refresh Self refresh, 1x/2x/4x refresh modes —
Die Revision BJR —
Status RoHS Compliant (Lead-Free & Halogen-Free per Hynix family datasheet) Compliant, Lead-Free and Halogen-Free
Aras MSL [DATA_NEEDED: moisture sensitivity level] —
Standard Package Quantity [DATA_NEEDED: standard quantity] —
Speed Grade — DDR4-2666 (2666 Mbps/pin)
Tegangan Pemberi Arus — 1.14 V to 1.26 V (VDDQ)
Clock Frequency — 1.6 GHz (internal interface per distributor data)
Standby Current — 30 mA (operating, per distributor listing)
Auto Self-Refresh — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Precharge — Yes
Refresh Interval — [DATA_NEEDED: tREFI refresh interval]

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