H5TC4G63MFR-PBA vs K4B4G1646E-BYMA Perbandingan
Perbandingan bersamaan detil H5TC4G63MFR-PBA dari SK hynix dan K4B4G1646E-BYMA dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | H5TC4G63MFR-PBA | K4B4G1646E-BYMA |
|---|---|---|
| Merek | SK hynix | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $14,32 |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | — |
| Laju Data | 1866 Mbps (PC3L-14900) | 1866 Mbps/pin |
| Paket | 96-ball FBGA | FBGA-96 |
| Number of Banks | 8 | — |
| Burst Length | BL8, BL4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| Tegangan Pemuat | — | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | — | 933 MHz |
| Suhu Kerja | — | 0°C to +95°C |
| Operating Current | — | 14 mA |
| Standby Current | — | 2 mA, 3 mA |
| Tipe Mounting | — | Surface Mount |
| RoHS | — | Compliant |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Jumlah Pin | — | 96 |