H5TC4G63MFR-PBA vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of H5TC4G63MFR-PBA by SK hynix and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5TC4G63MFR-PBA
H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
H5TC4G63MFR-PBA β Active
Specification Comparison
| Parameter | H5TC4G63MFR-PBA | K4B4G1646E-BYMA |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | β |
| Data Rate | 1866 Mbps (PC3L-14900) | 1866 Mbps/pin |
| Package | 96-ball FBGA | FBGA-96 |
| Number of Banks | 8 | β |
| Burst Length | BL8, BL4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| CAS Latency (CL) | Programmable | β |
| CAS Write Latency (CWL) | Programmable | β |
| Additive Latency | Programmable | β |
| On-Die Termination (ODT) | Yes | β |
| ZQ Calibration | Yes | β |
| Write Leveling | Yes | β |
| Auto Self-Refresh | Yes | β |
| Temperature-Compensated Self-Refresh | Yes | β |
| Process Technology | 30nm-class | β |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | β |
| Supply Voltage | β | 1.35 V (1.28 V to 1.575 V) |
| Clock Frequency | β | 933 MHz |
| Operating Temperature | β | 0Β°C to +95Β°C |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| Mounting Type | β | Surface Mount |
| RoHS | β | Compliant |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Number of Pins | β | 96 |