IAUA210N10S5N024AUMA1 vs ISC015N06NM5ATMA1 Perbandingan

Perbandingan bersamaan detil IAUA210N10S5N024AUMA1 dari Infineon dan ISC015N06NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUA210N10S5N024AUMA1 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 5
Technology MOSFET (Metal Oxide), N-Channel Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tj 210 A —
Continuous Drain Current (ID) @ TC=25°C [DATA_NEEDED: ID at TC=25°C] —
On-Resistance RDS(on) Max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th) value] —
Gate Charge Qg (typ) [DATA_NEEDED: Qg typ @ VGS=10V] —
Power Dissipation (PD) @ TC=25°C 238 W —
Rentang Suhu Kerja -55°C to +175°C (TJ) -55 C to +175 C
Paket PG-HSOF-5-4 (7×8 mm² sTOLL) PG-TDSON-8 (PQFN 5x6) Drain-Down
Tipe Mounting Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL rating] —
Avalanche Energy Rated Yes (per datasheet) —
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
MSL (Moisture Sensitivity Level) — 1

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IAUA210N10S5N024AUMA1

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