IAUA210N10S5N024AUMA1 vs ISC015N06NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUA210N10S5N024AUMA1 disebabkan oleh Infineon dan ISC015N06NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUA210N10S5N024AUMA1 ISC015N06NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS 5
Technology MOSFET (Metal Oxide), N-Channel Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) @ Tj 210 A —
Continuous Drain Current (ID) @ TC=25°C [DATA_NEEDED: ID at TC=25°C] —
On-Resistance RDS(on) Max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th) value] —
Gate Charge Qg (typ) [DATA_NEEDED: Qg typ @ VGS=10V] —
Power Dissipation (PD) @ TC=25°C 238 W —
Gambaran Suhu Operasi -55°C to +175°C (TJ) -55 C to +175 C
Kemasan PG-HSOF-5-4 (7×8 mm² sTOLL) PG-TDSON-8 (PQFN 5x6) Drain-Down
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL rating] —
Avalanche Energy Rated Yes (per datasheet) —
Polarity / Channel Type — N-Channel
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TA=25C — 33 A
Pulsed Drain Current (IDM) at TC=25C — 259 A
On-Resistance RDS(on) typical at VGS=10V — 1.5 mOhm
Total Power Dissipation (TA) — 3 W
Total Power Dissipation (TC) — 188 W
MSL (Moisture Sensitivity Level) — 1

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