IAUC100N04S6L020ATMA1 vs IAUT300N10S5N015ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC100N04S6L020ATMA1 dari Infineon dan IAUT300N10S5N015ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUC100N04S6L020ATMA1 IAUT300N10S5N015ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Breakdown Voltage V(BR)DSS 40 V —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Tc) 75 W —
RDS(on) Maximum @ VGS=10V, ID=50A 2.04 mΩ —
RDS(on) Typical 2.0 mΩ —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) Typical 2.0 V —
Technology OptiMOS 6 OptiMOS 5 N-Channel Power MOSFET
Rentang Suhu Kerja -55 °C to +175 °C (TJ) -55°C to +175°C
Paket PG-TDSON-8 (SS08, 5x6 mm leadless) PG-HSOF-8-1 (HSOF-8)
Tipe Mounting Surface Mount Surface Mount
Qualification Automotive grade —
Packaging Tape & Reel (TMA1) —
Status RoHS Compliant —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc) — 300 A
Power Dissipation (PD, Tc) — 375 W
RDS(on) (typ, VGS=10V) — 1.5 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) value]
Automotive Qualification — AEC-Q101 qualified
Level MSL — MSL1 (260°C peak reflow)
RoHS Compliance — RoHS compliant (Green product)
Avalanche Tested — 100% avalanche tested
Polarity — N-Channel
Mode of Operation — Enhancement-mode

Spek dan Sumber

IAUC100N04S6L020ATMA1

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IAUT300N10S5N015ATMA1

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