IAUC100N04S6L020ATMA1 vs IAUT300N10S5N015ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6L020ATMA1 disebabkan oleh Infineon dan IAUT300N10S5N015ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUT300N10S5N015ATMA1 IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC100N04S6L020ATMA1 IAUT300N10S5N015ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Breakdown Voltage V(BR)DSS 40 V —
Continuous Drain Current (Tc) 100 A —
Power Dissipation (Tc) 75 W —
RDS(on) Maximum @ VGS=10V, ID=50A 2.04 mΩ —
RDS(on) Typical 2.0 mΩ —
Gate-Source Voltage VGS (max) ±20 V —
Gate Threshold Voltage VGS(th) Typical 2.0 V —
Technology OptiMOS 6 OptiMOS 5 N-Channel Power MOSFET
Gambaran Suhu Operasi -55 °C to +175 °C (TJ) -55°C to +175°C
Kemasan PG-TDSON-8 (SS08, 5x6 mm leadless) PG-HSOF-8-1 (HSOF-8)
Jenis Pemasangan Surface Mount Surface Mount
Qualification Automotive grade —
Packaging Tape & Reel (TMA1) —
Status RoHS Compliant —
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tc) — 300 A
Power Dissipation (PD, Tc) — 375 W
RDS(on) (typ, VGS=10V) — 1.5 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) value]
Automotive Qualification — AEC-Q101 qualified
Aras MSL — MSL1 (260°C peak reflow)
RoHS Compliance — RoHS compliant (Green product)
Avalanche Tested — 100% avalanche tested
Polarity — N-Channel
Mode of Operation — Enhancement-mode

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga