IAUC50N08S5L096ATMA1 vs IAUZ30N08S5N186ATMA1 Perbandingan
Perbandingan bersamaan detil IAUC50N08S5L096ATMA1 dari Infineon dan IAUZ30N08S5N186ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUC50N08S5L096ATMA1 | IAUZ30N08S5N186ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) | 50 A (Tc) | — |
| Pulsed Drain Current (IDM) | 200 A | — |
| On-Resistance (RDS(on)) | 9.6 mΩ max @ VGS=10V, ID=25A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Power Dissipation (PD) | 60 W (Tc) | — |
| Rentang Suhu Kerja | -55°C to +175°C | -55 °C to +175 °C (automotive) |
| Paket | PG-TDSON-8-33 (5x6 mm) | PG-TSDSON-8-32 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Technology | — | OptiMOS 5 N-Channel Power MOSFET (trench) |
| Continuous Drain Current (ID, Tj) | — | 30 A |
| Power Dissipation (PD, Tc) | — | 41 W |
| On-State Resistance (RDS(on)) | — | 18.6 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |