IAUC50N08S5L096ATMA1 vs IAUZ30N08S5N186ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC50N08S5L096ATMA1 disebabkan oleh Infineon dan IAUZ30N08S5N186ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IAUC50N08S5L096ATMA1 | IAUZ30N08S5N186ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) | 50 A (Tc) | — |
| Pulsed Drain Current (IDM) | 200 A | — |
| On-Resistance (RDS(on)) | 9.6 mΩ max @ VGS=10V, ID=25A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Power Dissipation (PD) | 60 W (Tc) | — |
| Gambaran Suhu Operasi | -55°C to +175°C | -55 °C to +175 °C (automotive) |
| Kemasan | PG-TDSON-8-33 (5x6 mm) | PG-TSDSON-8-32 (5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Aras MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Technology | — | OptiMOS 5 N-Channel Power MOSFET (trench) |
| Continuous Drain Current (ID, Tj) | — | 30 A |
| Power Dissipation (PD, Tc) | — | 41 W |
| On-State Resistance (RDS(on)) | — | 18.6 mΩ (typical, VGS = 10 V) |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |