IAUCN04S7N027GATMA1 vs IAUCN04S7L009ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7N027GATMA1 dari Infineon dan IAUCN04S7L009ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7N027GATMA1 IAUCN04S7L009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vds max) 40 V —
Continuous Drain Current (Id) 117 A —
On-Resistance (Rds(on) max) 2.67 mOhm —
Power Dissipation (Pd) 70 W (Tc) —
Paket / Case PG-THSOG-4-1 (SSO4G 5x6) —
Tipe Mounting Surface Mount Surface Mount
Qualification Automotive —
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] -55 °C to +175 °C (Tj)
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] [DATA_NEEDED: Vgs(th) typical value]
Gate-Source Voltage Max (Vgs) [DATA_NEEDED: Vgs max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL] 1
Substrate Compatibility IMS substrates and legacy FR-4 —
Part Number — IAUCN04S7L009ATMA1
Tipe Transistor — N-Channel MOSFET
Technology — OptiMOS™ 7 (trench-gate)
Drain-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id, Tc=25°C) — 275 A (Tj)
Continuous Drain Current (Id, Tc=100°C) — 175 A
Power Dissipation (Pd, Tc=25°C) — 129 W
Rds(on) Max @ Vgs=10V — 0.91 mΩ
Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Paket — PG-TDSON-8-34 (TDSON EP)
Automotive Qualification — AEC-Q101 qualified

Spek dan Sumber

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