IAUCN08S7N024TATMA1 vs IAUCN10S7L290TATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN08S7N024TATMA1 dari Infineon dan IAUCN10S7L290TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ AktifInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN08S7N024TATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tj | 165 A | — |
| Power Dissipation (Pd) at Tc | 157 W | — |
| Rds(on) Max at Vgs=10V | 2.44 mOhm | — |
| Paket / Case | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Cooling | Top-side cooled | — |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q100 qualified |
| Status RoHS | Compliant | — |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: Qg typical] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ] | — |
| Product Family | — | OptiMOS™ 7 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Paket | — | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Level MSL | — | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |