IAUCN08S7N024TATMA1 vs IAUCN10S7L290TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7N024TATMA1 sa pamamagitan ng Infineon at IAUCN10S7L290TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ NakahandaInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7N024TATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide Semiconductor) | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tj | 165 A | — |
| Power Dissipation (Pd) at Tc | 157 W | — |
| Rds(on) Max at Vgs=10V | 2.44 mOhm | — |
| Packhaging / Kaso | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Cooling | Top-side cooled | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q100 qualified |
| Tindminan RoHS | Compliant | — |
| Gate Threshold (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: Qg typical] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typ] | — |
| Product Family | — | OptiMOS™ 7 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Packhaging | — | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |