IAUCN10S5L280DATMA1 vs IAUCN08S7L018ATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN10S5L280DATMA1 dari Infineon dan IAUCN08S7L018ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN10S5L280DATMA1 | IAUCN08S7L018ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 7 |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tj | 23 A | — |
| Power Dissipation (Pd) at Tc | 38 W | — |
| Paket | PG-TDSON-8-61 (SSO8) | PG-TDSON-8-43 (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) | — |
| Technology | OptiMOS 5 Trench MOSFET | N-Channel Trench MOSFET |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55 °C to +175 °C |
| Jumlah Pin | 8 | — |
| Level MSL | 1 | [DATA_NEEDED: MSL level] |
| Status RoHS | Compliant | Compliant |
| Packing | Tape & Reel (T&R) | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tj | — | 210 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: ID at Tc] |
| Maximum RDS(on) at VGS=10 V | — | 1.8 mΩ |
| Power Dissipation (PD) at Tc=25 °C | — | 169 W |
| Qualification | — | Automotive (per Infineon part description) |
| Gate Drive Voltage (typical) | — | 10 V |