IAUCN10S5L280DATMA1 vs IAUCN08S7L018ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN10S5L280DATMA1 sa pamamagitan ng Infineon at IAUCN08S7L018ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ NakahandaInfineon
IAUCN08S7L018ATMA1 - 80V 1.8mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L018ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN10S5L280DATMA1 | IAUCN08S7L018ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOS 7 |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tj | 23 A | — |
| Power Dissipation (Pd) at Tc | 38 W | — |
| Packhaging | PG-TDSON-8-61 (SSO8) | PG-TDSON-8-43 (5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) | — |
| Technology | OptiMOS 5 Trench MOSFET | N-Channel Trench MOSFET |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | -55 °C to +175 °C |
| Bilang ng Pin | 8 | — |
| Level ng MSL | 1 | [DATA_NEEDED: MSL level] |
| Tindminan RoHS | Compliant | Compliant |
| Packing | Tape & Reel (T&R) | — |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tj | — | 210 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: ID at Tc] |
| Maximum RDS(on) at VGS=10 V | — | 1.8 mΩ |
| Power Dissipation (PD) at Tc=25 °C | — | 169 W |
| Qualification | — | Automotive (per Infineon part description) |
| Gate Drive Voltage (typical) | — | 10 V |