IAUCN10S5L280DATMA1 vs IAUCN10S7L290TATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN10S5L280DATMA1 dari Infineon dan IAUCN10S7L290TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN10S5L280DATMA1 IAUCN10S7L290TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS™ 7
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
Paket PG-TDSON-8-61 (SSO8) PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled
Tipe Mounting Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET —
Rentang Suhu Kerja -55C to +175C (junction) —
Jumlah Pin 8 —
Level MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant —
Packing Tape & Reel (T&R) —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25°C — 27 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulse rating]
On-Resistance RDS(on) max @ VGS=10V — 28.6 mΩ
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C — 45 W
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q100 qualified
RoHS Compliance — Compliant
Lead-Free — Yes
Avalanche Rated — Yes
ESD Protection — HBM Class 1C (per Infineon datasheet)

Spek dan Sumber

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