IAUCN10S5L280DATMA1 vs IAUCN10S7L290TATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN10S5L280DATMA1 disebabkan oleh Infineon dan IAUCN10S7L290TATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN10S5L280DATMA1 IAUCN10S7L290TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 OptiMOS™ 7
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
Kemasan PG-TDSON-8-61 (SSO8) PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET —
Gambaran Suhu Operasi -55C to +175C (junction) —
Kiraan Pin 8 —
Aras MSL 1 1 (per JEDEC J-STD-020)
Status RoHS Compliant —
Packing Tape & Reel (T&R) —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25°C — 27 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulse rating]
On-Resistance RDS(on) max @ VGS=10V — 28.6 mΩ
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C — 45 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Automotive Qualification — AEC-Q100 qualified
RoHS Compliance — Compliant
Lead-Free — Yes
Avalanche Rated — Yes
ESD Protection — HBM Class 1C (per Infineon datasheet)

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