IAUS300N08S5N012 vs IAUT300N08S5N012ATMA2 Perbandingan

Perbandingan bersamaan detil IAUS300N08S5N012 dari Infineon dan IAUT300N08S5N012ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUS300N08S5N012 IAUT300N08S5N012ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC 300 A —
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V 1.2 mΩ typical —
Gate-Source Threshold Voltage VGS(th) 3.8 V at 275 µA —
Power Dissipation (PD) at TC 375 W —
Rentang Suhu Kerja -55°C to +175°C -55 °C to +175 °C (TJ)
Paket PG-HSOG-8-1 (Surface Mount) PG-HSOF-8-1 (8-pin HSOF with drain tab)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (up to 260°C peak reflow) [DATA_NEEDED: MSL level]
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance RoHS compliant (Green product) Compliant
Avalanche Rating 100% Avalanche tested —
Technology OptiMOS 5 planar trench —
Terminals 8 —
Product Family — OptiMOS™-5 80 V
Tipe Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID, Tc=25°C) — 300 A
Pulsed Drain Current (IDM) — 1200 A (per datasheet, typical)
On-Resistance RDS(on) max @ VGS=10V — 1.2 mΩ
Maximum Power Dissipation (PD, Tc) — 375 W
Gate-to-Source Voltage (VGS) — ±20 V

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IAUT300N08S5N012ATMA2

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