IAUS300N08S5N012 vs IAUT300N08S5N012ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUS300N08S5N012 sa pamamagitan ng Infineon at IAUT300N08S5N012ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUS300N08S5N012 - 80V 300A 1.2mΩ OptiMOS 5 Power MOSFET | Infineon
IAUS300N08S5N012 ✓ NakahandaInfineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUS300N08S5N012 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC | 300 A | — |
| On-Resistance R<sub>DS(on)</sub> Max at VGS=10V | 1.2 mΩ typical | — |
| Gate-Source Threshold Voltage VGS(th) | 3.8 V at 275 µA | — |
| Power Dissipation (PD) at TC | 375 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | -55 °C to +175 °C (TJ) |
| Packhaging | PG-HSOG-8-1 (Surface Mount) | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260°C peak reflow) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | RoHS compliant (Green product) | Compliant |
| Avalanche Rating | 100% Avalanche tested | — |
| Technology | OptiMOS 5 planar trench | — |
| Terminals | 8 | — |
| Product Family | — | OptiMOS™-5 80 V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| Pulsed Drain Current (IDM) | — | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |