IAUT300N08S5N012ATMA2 vs IPG20N06S4L14AATMA1 Perbandingan
Perbandingan bersamaan detil IAUT300N08S5N012ATMA2 dari Infineon dan IPG20N06S4L14AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUT300N08S5N012ATMA2 | IPG20N06S4L14AATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™-5 80 V | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID, Tc=25°C) | 300 A | — |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΩ | — |
| Maximum Power Dissipation (PD, Tc) | 375 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (TJ) | -55°C to +175°C (junction) |
| Paket | PG-HSOF-8-1 (8-pin HSOF with drain tab) | PG-TDSON-8-10 (Wettable Flank) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| RoHS Compliance | Compliant | Green Product (RoHS compliant) |
| Level MSL | [DATA_NEEDED: MSL level] | — |
| Part Number | — | IPG20N06S4L14AATMA1 |
| FET Type | — | 2 N-Channel (Dual) |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 50 W |
| RDS(on) at VGS=10V | — | 13.7 mΩ typical |
| RDS(on) at VGS=4.5V | — | 14 mΩ typical |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th)] |
| Logic-Level Gate Drive | — | Yes |
| Peak Reflow Temperature | — | 260°C |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (Wettable Flank) |
| Technology | — | OptiMOS™ Trench |