IAUZ40N08S5N100ATMA1 vs BSC052N08NS5ATMA1 Perbandingan
Perbandingan bersamaan detil IAUZ40N08S5N100ATMA1 dari Infineon dan BSC052N08NS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ40N08S5N100ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUZ40N08S5N100ATMA1 | BSC052N08NS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS-5 N-Channel MOSFET | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 40 A | — |
| Power Dissipation (PD, Tc=25°C) | 68 W | — |
| On-Resistance RDS(on) max | 10 mΩ @ VGS=10 V, ID=20 A | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | 2.5-3.0 V |
| Total Gate Charge Qg typ | 24.2 nC @ VGS=10 V | — |
| Input Capacitance Ciss | 1591 pF @ VDS=40 V | — |
| Gate-Source Voltage VGS max | ±20 V | — |
| Rentang Suhu Kerja | -55 °C to +175 °C (TJ) | — |
| Paket | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm | PG-TDSON-8 (SuperSO8) 5x6 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (unlimited) |
| Automotive Qualification | AEC-Q101 qualified | — |
| Status RoHS | Compliant | Compliant |
| Channel Type | N-Channel | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC052N08NS5ATMA1 |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tc) | — | 95 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.2 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Total Power Dissipation (Tc) | — | 83 W |
| Total Power Dissipation (Ta) | — | 2.5 W |
| Suhu Hubung Kerja | — | -55C to +150C |