IGB50N60TATMA1 vs IKD06N60RATMA1 Perbandingan

Perbandingan bersamaan detil IGB50N60TATMA1 dari Infineon dan IKD06N60RATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IGB50N60TATMA1 IKD06N60RATMA1
Merek Infineon Infineon
Kategori IGBTs IGBTs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series Trenchstop IGBT3 —
Technology Trench + Field-Stop TRENCHSTOP RC-IGBT3 (Reverse Conducting)
Collector-Emitter Voltage (VCES) 600 V —
Continuous Collector Current (IC) at TC=25°C 100 A —
Continuous Collector Current (IC) at TC=100°C 50 A —
Pulsed Collector Current (ICM, tp limited by Tjmax) 150 A —
Total Power Dissipation (Ptot) at TC=25°C 333 W —
Gate-Emitter Threshold Voltage (VGE(th)) 5.0 V (typ), 6.5 V (max) —
Tegangan Saturasi Pemisah-Penjana (Vce(sat)) 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) —
Short-Circuit Withstand Time (tsc) 5 µs min at VCE=360V, TJ≤150°C —
Suhu Hubung Kerja -40 °C to +150 °C —
Paket PG-TO263-3-2 (D2PAK / TO-263) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Co-packaged Diode Anti-parallel EmCon3 diode —
Status RoHS Compliant Compliant
Level MSL 1 —
Configuration Single Single with built-in diode
Tipe Transistor — IGBT - Trench Field Stop with anti-parallel diode
Collector-Emitter Voltage (VCE) — 600 V
Continuous Collector Current (IC) at TC=25C — 12 A
Pulsed Collector Current (ICM) — [DATA_NEEDED: pulsed collector current]
Maximum Power Dissipation — 100 W
Gate-Emitter Voltage (VGE) — [DATA_NEEDED: VGE max rating]
VCE(sat) at IC=6A, VGE=15V — [DATA_NEEDED: VCE(sat) typical]
Diode Forward Voltage (VF) at IF=6A — [DATA_NEEDED: VF typical]
Rentang Suhu Kerja — -40C to +150C (junction)
Jumlah Pin — 3 (2 + Tab)
Automotive Qualified — Yes (per FindIC listing)
Switching Frequency Range (typical) — 4 kHz to 20 kHz (hard-switching)

Spek dan Sumber

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