IGB50N60TATMA1 vs IKD06N60RATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IGB50N60TATMA1 sa pamamagitan ng Infineon at IKD06N60RATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IGB50N60TATMA1 IGB50N60TATMA1 - 600V 50A Trenchstop IGBT | Infineon | D2PAK

IGB50N60TATMA1 - 600V 50A Trenchstop IGBT | Infineon | D2PAK

IGB50N60TATMA1 ✓ Nakahanda
Infineon
IKD06N60RATMA1 IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon

IKD06N60RATMA1 - 600V 12A TRENCHSTOP RC-IGBT | Infineon

IKD06N60RATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IGB50N60TATMA1 IKD06N60RATMA1
Brand Infineon Infineon
Kategorya IGBTs IGBTs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series Trenchstop IGBT3 —
Technology Trench + Field-Stop TRENCHSTOP RC-IGBT3 (Reverse Conducting)
Collector-Emitter Voltage (VCES) 600 V —
Continuous Collector Current (IC) at TC=25°C 100 A —
Continuous Collector Current (IC) at TC=100°C 50 A —
Pulsed Collector Current (ICM, tp limited by Tjmax) 150 A —
Total Power Dissipation (Ptot) at TC=25°C 333 W —
Gate-Emitter Threshold Voltage (VGE(th)) 5.0 V (typ), 6.5 V (max) —
Voltage ng Collector-Emitter na Naging饱和 (Vce(sat)) 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) —
Short-Circuit Withstand Time (tsc) 5 µs min at VCE=360V, TJ≤150°C —
Temperature ng Junction na Operasyon -40 °C to +150 °C —
Packhaging PG-TO263-3-2 (D2PAK / TO-263) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Co-packaged Diode Anti-parallel EmCon3 diode —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 —
Configuration Single Single with built-in diode
Uri ng Transistor — IGBT - Trench Field Stop with anti-parallel diode
Collector-Emitter Voltage (VCE) — 600 V
Continuous Collector Current (IC) at TC=25C — 12 A
Pulsed Collector Current (ICM) — [DATA_NEEDED: pulsed collector current]
Maximum Power Dissipation — 100 W
Gate-Emitter Voltage (VGE) — [DATA_NEEDED: VGE max rating]
VCE(sat) at IC=6A, VGE=15V — [DATA_NEEDED: VCE(sat) typical]
Diode Forward Voltage (VF) at IF=6A — [DATA_NEEDED: VF typical]
Hanay ng Temperature na Operasyon — -40C to +150C (junction)
Bilang ng Pin — 3 (2 + Tab)
Automotive Qualified — Yes (per FindIC listing)
Switching Frequency Range (typical) — 4 kHz to 20 kHz (hard-switching)

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