IGB50N60TATMA1 vs IKD06N60RATMA1 比較
詳細並排比較 IGB50N60TATMA1 由 Infineon 與 IKD06N60RATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IGB50N60TATMA1 | IKD06N60RATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | IGBTs | IGBTs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | Trenchstop IGBT3 | — |
| Technology | Trench + Field-Stop | TRENCHSTOP RC-IGBT3 (Reverse Conducting) |
| Collector-Emitter Voltage (VCES) | 600 V | — |
| Continuous Collector Current (IC) at TC=25°C | 100 A | — |
| Continuous Collector Current (IC) at TC=100°C | 50 A | — |
| Pulsed Collector Current (ICM, tp limited by Tjmax) | 150 A | — |
| Total Power Dissipation (Ptot) at TC=25°C | 333 W | — |
| Gate-Emitter Threshold Voltage (VGE(th)) | 5.0 V (typ), 6.5 V (max) | — |
| 集極-射極飽和電壓 (Vce(sat)) | 1.5 V (typ at VGE=15V, IC=50A, TJ=25°C) | — |
| Short-Circuit Withstand Time (tsc) | 5 µs min at VCE=360V, TJ≤150°C | — |
| 工作接面溫度 | -40 °C to +150 °C | — |
| 封裝 | PG-TO263-3-2 (D2PAK / TO-263) | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Co-packaged Diode | Anti-parallel EmCon3 diode | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 | — |
| Configuration | Single | Single with built-in diode |
| 電晶體類型 | — | IGBT - Trench Field Stop with anti-parallel diode |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous Collector Current (IC) at TC=25C | — | 12 A |
| Pulsed Collector Current (ICM) | — | [DATA_NEEDED: pulsed collector current] |
| Maximum Power Dissipation | — | 100 W |
| Gate-Emitter Voltage (VGE) | — | [DATA_NEEDED: VGE max rating] |
| VCE(sat) at IC=6A, VGE=15V | — | [DATA_NEEDED: VCE(sat) typical] |
| Diode Forward Voltage (VF) at IF=6A | — | [DATA_NEEDED: VF typical] |
| 工作溫度範圍 | — | -40C to +150C (junction) |
| 腳位數 | — | 3 (2 + Tab) |
| Automotive Qualified | — | Yes (per FindIC listing) |
| Switching Frequency Range (typical) | — | 4 kHz to 20 kHz (hard-switching) |