IKD06N60RATMA1 vs IKD04N60RATMA1 Perbandingan

Perbandingan bersamaan detil IKD06N60RATMA1 dari Infineon dan IKD04N60RATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IKD06N60RATMA1 IKD04N60RATMA1
Merek Infineon Infineon
Kategori IGBTs IGBTs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor IGBT - Trench Field Stop with anti-parallel diode IGBT - Trench Field Stop with integrated diode
Configuration Single with built-in diode Single
Collector-Emitter Voltage (VCE) 600 V —
Continuous Collector Current (IC) at TC=25C 12 A 8 A
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current] [DATA_NEEDED: pulsed collector current]
Maximum Power Dissipation 100 W —
Gate-Emitter Voltage (VGE) [DATA_NEEDED: VGE max rating] —
Technology TRENCHSTOP RC-IGBT3 (Reverse Conducting) —
VCE(sat) at IC=6A, VGE=15V [DATA_NEEDED: VCE(sat) typical] —
Diode Forward Voltage (VF) at IF=6A [DATA_NEEDED: VF typical] —
Rentang Suhu Kerja -40C to +150C (junction) -40C to +150C
Paket PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 (2 + Tab) 3 (2 leads + tab)
Status RoHS Compliant Compliant
Automotive Qualified Yes (per FindIC listing) —
Switching Frequency Range (typical) 4 kHz to 20 kHz (hard-switching) —
Manufacturer — Infineon Technologies
Series — RC-Drives
Collector-Emitter Voltage (VCES) — 600 V
Power Dissipation (PD) at TC=25C — 75 W
Gate-Emitter Voltage (VGES) — [DATA_NEEDED: gate-emitter voltage rating]
VCE(sat) at IC=4A, VGE=15V — [DATA_NEEDED: VCE(sat) typical at 4A]
Gate Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th)]
Integrated Anti-Parallel Diode — Yes
Level MSL — 1
Technology Target — Consumer drives / motor control

Spek dan Sumber

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