IKD06N60RATMA1 vs IKD04N60RATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IKD06N60RATMA1 sa pamamagitan ng Infineon at IKD04N60RATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IKD06N60RATMA1 | IKD04N60RATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | IGBTs | IGBTs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | IGBT - Trench Field Stop with anti-parallel diode | IGBT - Trench Field Stop with integrated diode |
| Configuration | Single with built-in diode | Single |
| Collector-Emitter Voltage (VCE) | 600 V | — |
| Continuous Collector Current (IC) at TC=25C | 12 A | 8 A |
| Pulsed Collector Current (ICM) | [DATA_NEEDED: pulsed collector current] | [DATA_NEEDED: pulsed collector current] |
| Maximum Power Dissipation | 100 W | — |
| Gate-Emitter Voltage (VGE) | [DATA_NEEDED: VGE max rating] | — |
| Technology | TRENCHSTOP RC-IGBT3 (Reverse Conducting) | — |
| VCE(sat) at IC=6A, VGE=15V | [DATA_NEEDED: VCE(sat) typical] | — |
| Diode Forward Voltage (VF) at IF=6A | [DATA_NEEDED: VF typical] | — |
| Hanay ng Temperature na Operasyon | -40C to +150C (junction) | -40C to +150C |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 3 (2 + Tab) | 3 (2 leads + tab) |
| Tindminan RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (per FindIC listing) | — |
| Switching Frequency Range (typical) | 4 kHz to 20 kHz (hard-switching) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | RC-Drives |
| Collector-Emitter Voltage (VCES) | — | 600 V |
| Power Dissipation (PD) at TC=25C | — | 75 W |
| Gate-Emitter Voltage (VGES) | — | [DATA_NEEDED: gate-emitter voltage rating] |
| VCE(sat) at IC=4A, VGE=15V | — | [DATA_NEEDED: VCE(sat) typical at 4A] |
| Gate Threshold Voltage (VGE(th)) | — | [DATA_NEEDED: VGE(th)] |
| Integrated Anti-Parallel Diode | — | Yes |
| Level ng MSL | — | 1 |
| Technology Target | — | Consumer drives / motor control |