IKD06N60RATMA1 vs IKD04N60RATMA1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma IKD06N60RATMA1 tarafından Infineon ve IKD04N60RATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IKD06N60RATMA1 IKD04N60RATMA1
Marka Infineon Infineon
Kategori IGBTs IGBTs
Yaşam Döngüsü Durumu Aktif Aktif
Transistor Türü IGBT - Trench Field Stop with anti-parallel diode IGBT - Trench Field Stop with integrated diode
Configuration Single with built-in diode Single
Collector-Emitter Voltage (VCE) 600 V —
Continuous Collector Current (IC) at TC=25C 12 A 8 A
Pulsed Collector Current (ICM) [DATA_NEEDED: pulsed collector current] [DATA_NEEDED: pulsed collector current]
Maximum Power Dissipation 100 W —
Gate-Emitter Voltage (VGE) [DATA_NEEDED: VGE max rating] —
Technology TRENCHSTOP RC-IGBT3 (Reverse Conducting) —
VCE(sat) at IC=6A, VGE=15V [DATA_NEEDED: VCE(sat) typical] —
Diode Forward Voltage (VF) at IF=6A [DATA_NEEDED: VF typical] —
İşletim Sıcaklığı Aralığı -40C to +150C (junction) -40C to +150C
Paket PG-TO252-3 (DPAK) PG-TO252-3 (DPAK)
Montaj Türü Surface Mount Surface Mount
Pin Sayısı 3 (2 + Tab) 3 (2 leads + tab)
RoHS Durumu Compliant Compliant
Automotive Qualified Yes (per FindIC listing) —
Switching Frequency Range (typical) 4 kHz to 20 kHz (hard-switching) —
Manufacturer — Infineon Technologies
Series — RC-Drives
Collector-Emitter Voltage (VCES) — 600 V
Power Dissipation (PD) at TC=25C — 75 W
Gate-Emitter Voltage (VGES) — [DATA_NEEDED: gate-emitter voltage rating]
VCE(sat) at IC=4A, VGE=15V — [DATA_NEEDED: VCE(sat) typical at 4A]
Gate Threshold Voltage (VGE(th)) — [DATA_NEEDED: VGE(th)]
Integrated Anti-Parallel Diode — Yes
MSL Seviyesi — 1
Technology Target — Consumer drives / motor control

Dökümanlar & Kaynaklar

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