IMLT65R040M2HXTMA1 vs AIMBG120R010M1XTMA1 Perbandingan

Perbandingan bersamaan detil IMLT65R040M2HXTMA1 dari Infineon dan AIMBG120R010M1XTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
AIMBG120R010M1XTMA1 AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon

AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon

AIMBG120R010M1XTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IMLT65R040M2HXTMA1 AIMBG120R010M1XTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family CoolSiC™ G2 (2nd generation SiC trench) CoolSiC™ G1 Automotive SiC Trench MOSFET
Technology Silicon Carbide (SiC) N-channel MOSFET Silicon Carbide (SiC) Trench MOSFET
Drain-Source Voltage (VDS) 650 V 1200 V
Continuous Drain Current (ID, TC) 57 A —
Pulsed Drain Current (ID,pulse) 143 A —
On-State Resistance RDS(on) (typ, VGS=18V) 40 mΩ —
On-State Resistance RDS(on) (max, VGS=18V) 49 mΩ —
Total Gate Charge QG 28 nC —
Output Charge QOSS @ 400 V 53 nC —
Output Energy EOSS @ 400 V 7.2 µJ —
Continuous Drain Power Dissipation (PD, TC) 268 W —
Recommended Gate Drive Voltage VGS 18 V (turn-off: 0 V or negative) —
Suhu Hubung Kerja -55 °C to +150 °C -55°C to +175°C
Paket PG-HDSOP-16-6 (surface mount, top-side-cooled) PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount
Tipe Mounting Surface Mount Surface Mount
Qualification JEDEC industrial —
Packaging Tape & Reel —
Special Features Kelvin source pin, low reverse-recovery charge, hard-switching optimized —
Channel Type — N-Channel
Continuous Drain Current (ID, Tc) — 205 A
On-Resistance RDS(on), typ — 8.7 mΩ
Power Dissipation (PD, Tc) — 882 W
Automotive Qualification — AEC-Q101
Jumlah Pin — 7 + Tab
Status RoHS — Compliant
Lead-Free — Yes
Level MSL — [DATA_NEEDED: MSL level per JEDEC J-STD-020]

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