IMLT65R040M2HXTMA1 vs AIMBG120R010M1XTMA1 比較
詳細並排比較 IMLT65R040M2HXTMA1 由 Infineon 與 AIMBG120R010M1XTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IMLT65R040M2HXTMA1 | AIMBG120R010M1XTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G2 (2nd generation SiC trench) | CoolSiC™ G1 Automotive SiC Trench MOSFET |
| Technology | Silicon Carbide (SiC) N-channel MOSFET | Silicon Carbide (SiC) Trench MOSFET |
| Drain-Source Voltage (VDS) | 650 V | 1200 V |
| Continuous Drain Current (ID, TC) | 57 A | — |
| Pulsed Drain Current (ID,pulse) | 143 A | — |
| On-State Resistance RDS(on) (typ, VGS=18V) | 40 mΩ | — |
| On-State Resistance RDS(on) (max, VGS=18V) | 49 mΩ | — |
| Total Gate Charge QG | 28 nC | — |
| Output Charge QOSS @ 400 V | 53 nC | — |
| Output Energy EOSS @ 400 V | 7.2 µJ | — |
| Continuous Drain Power Dissipation (PD, TC) | 268 W | — |
| Recommended Gate Drive Voltage VGS | 18 V (turn-off: 0 V or negative) | — |
| 工作接面溫度 | -55 °C to +150 °C | -55°C to +175°C |
| 封裝 | PG-HDSOP-16-6 (surface mount, top-side-cooled) | PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | — |
| Packaging | Tape & Reel | — |
| Special Features | Kelvin source pin, low reverse-recovery charge, hard-switching optimized | — |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 205 A |
| On-Resistance RDS(on), typ | — | 8.7 mΩ |
| Power Dissipation (PD, Tc) | — | 882 W |
| Automotive Qualification | — | AEC-Q101 |
| 腳位數 | — | 7 + Tab |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| MSL 等級 | — | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |