IMLT65R040M2HXTMA1 vs AIMBG120R010M1XTMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IMLT65R040M2HXTMA1 sa pamamagitan ng Infineon at AIMBG120R010M1XTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IMLT65R040M2HXTMA1 - 650V 57A 40mOhm CoolSiC G2 MOSFET | Infineon
IMLT65R040M2HXTMA1 ✓ NakahandaInfineon
AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon
AIMBG120R010M1XTMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IMLT65R040M2HXTMA1 | AIMBG120R010M1XTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolSiC™ G2 (2nd generation SiC trench) | CoolSiC™ G1 Automotive SiC Trench MOSFET |
| Technology | Silicon Carbide (SiC) N-channel MOSFET | Silicon Carbide (SiC) Trench MOSFET |
| Drain-Source Voltage (VDS) | 650 V | 1200 V |
| Continuous Drain Current (ID, TC) | 57 A | — |
| Pulsed Drain Current (ID,pulse) | 143 A | — |
| On-State Resistance RDS(on) (typ, VGS=18V) | 40 mΩ | — |
| On-State Resistance RDS(on) (max, VGS=18V) | 49 mΩ | — |
| Total Gate Charge QG | 28 nC | — |
| Output Charge QOSS @ 400 V | 53 nC | — |
| Output Energy EOSS @ 400 V | 7.2 µJ | — |
| Continuous Drain Power Dissipation (PD, TC) | 268 W | — |
| Recommended Gate Drive Voltage VGS | 18 V (turn-off: 0 V or negative) | — |
| Temperature ng Junction na Operasyon | -55 °C to +150 °C | -55°C to +175°C |
| Packhaging | PG-HDSOP-16-6 (surface mount, top-side-cooled) | PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Qualification | JEDEC industrial | — |
| Packaging | Tape & Reel | — |
| Special Features | Kelvin source pin, low reverse-recovery charge, hard-switching optimized | — |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 205 A |
| On-Resistance RDS(on), typ | — | 8.7 mΩ |
| Power Dissipation (PD, Tc) | — | 882 W |
| Automotive Qualification | — | AEC-Q101 |
| Bilang ng Pin | — | 7 + Tab |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Level ng MSL | — | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |