IPA60R190C6 vs IPB60R190C6ATMA1 Perbandingan
Perbandingan bersamaan detil IPA60R190C6 dari Infineon dan IPB60R190C6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPA60R190C6 | IPB60R190C6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS C6 | — |
| Technology | Superjunction (SJ) / CoolMOS | CoolMOS C6 Superjunction N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 20.2 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 190 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typ] | — |
| Rise Time tr typ | [DATA_NEEDED: tr] | — |
| Fall Time tf typ | [DATA_NEEDED: tf] | — |
| Avalanche Energy EAS | [DATA_NEEDED: EAS] | — |
| Power Dissipation Ptot at TC=25C | [DATA_NEEDED: Ptot] | — |
| Rentang Suhu Kerja | -55C to +150C | -55C to +150C |
| Paket | TO-220 FullPAK (TO-220FP-3) | PG-TO263-3 (D2PAK) |
| Tipe Mounting | Through-Hole (isolated tab) | Surface Mount |
| Channel Type | N-Channel enhancement mode | — |
| Status RoHS | Compliant | Compliant |
| Channel Polarity | N-Channel | — |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | — | 32 nC |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| Level MSL | — | 1 |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |