IPA60R190C6 vs IPB60R190C6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPA60R190C6 disebabkan oleh Infineon dan IPB60R190C6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPA60R190C6 | IPB60R190C6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS C6 | — |
| Technology | Superjunction (SJ) / CoolMOS | CoolMOS C6 Superjunction N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| Continuous Drain Current (ID) at TC=25C | 20.2 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 190 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 3.5 V | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg typ] | — |
| Rise Time tr typ | [DATA_NEEDED: tr] | — |
| Fall Time tf typ | [DATA_NEEDED: tf] | — |
| Avalanche Energy EAS | [DATA_NEEDED: EAS] | — |
| Power Dissipation Ptot at TC=25C | [DATA_NEEDED: Ptot] | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C |
| Kemasan | TO-220 FullPAK (TO-220FP-3) | PG-TO263-3 (D2PAK) |
| Jenis Pemasangan | Through-Hole (isolated tab) | Surface Mount |
| Channel Type | N-Channel enhancement mode | — |
| Status RoHS | Compliant | Compliant |
| Channel Polarity | N-Channel | — |
| Continuous Drain Current (ID) at Tc=25C | — | 20.2 A |
| Power Dissipation (PD) at Tc=25C | — | 151 W |
| On-Resistance RDS(on) max at VGS=10V | — | 190 mOhm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V (typ) |
| Total Gate Charge (Qg) typ | — | 32 nC |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Aras MSL | — | 1 |
| Avalanche Energy Rated | — | Yes (EAS per datasheet) |