IPB017N10N5LFATMA1 vs IPB038N12N3GATMA1 Perbandingan
Perbandingan bersamaan detil IPB017N10N5LFATMA1 dari Infineon dan IPB038N12N3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB017N10N5LFATMA1 | IPB038N12N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 Linear FET | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide Semiconductor) | OptiMOS trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25C | 180 A | — |
| Continuous Drain Current (ID) @ TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Maximum Power Dissipation (PD) @ TC=25C | 313 W | — |
| Drain-Source On-Resistance (RDS(on)) @ VGS=10V | 1.7 mΩ (max) | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55C to +175C (junction) |
| Paket / Case | PG-TO263-7 (D2PAK-7), surface mount | PG-TO263-3 (D2PAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (unlimited) | — |
| Avalanche Rated | Yes | Yes |
| Linear-Mode (SOA) Optimized | Yes (OptiMOS Linear FET) | — |
| Product Family | — | OptiMOS 120V |
| Drain-Source Voltage (Vdss) | — | 120 V |
| Continuous Drain Current (Id) @ Tc | — | 120 A |
| Power Dissipation (Pd) @ Tc | — | 300 W |
| On-State Resistance (Rds(on)) | — | 3.8 mOhm (typical) |
| Gate Drive | — | Logic-level compatible |
| Standard Package Quantity | — | 1000 (Tape & Reel) |