IPB024N10N5ATMA1 vs IPB031N08N5ATMA1 Perbandingan

Perbandingan bersamaan detil IPB024N10N5ATMA1 dari Infineon dan IPB031N08N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB024N10N5ATMA1 IPB031N08N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 N-Channel MOSFET (trench, shielded gate) OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, TC=25C) 180 A —
Power Dissipation (PD, TC=25C) 250 W —
On-Resistance RDS(on) max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] —
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: Qg total gate charge] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total gate charge] [DATA_NEEDED: Qg total]
Input Capacitance Ciss [DATA_NEEDED: Ciss value] —
Output Capacitance Coss [DATA_NEEDED: Coss value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] —
Rentang Suhu Kerja -55C to +175C (junction) -55 C to +175 C
Paket PG-TO263-7 (D2PAK-7) PG-TO263-3 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Level MSL 1 (unlimited floor life at <30C/85% RH) [DATA_NEEDED: MSL rating]
Packaging Tape & Reel (13-inch reel) —
Bebas Halogen Yes (per Infineon product family policy) —
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) — 120 A (Tc)
Power Dissipation (PD) Max — 167 W (Tc)
On-Resistance (RDS(on)) Max — 3.1 mOhm (VGS=10V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Jumlah Pin — 3 (Gate, Drain, Source + Tab)
Tab Connection — Drain (electrically connected to pin)
Automotive Qualified — Yes (per Arrow listing)

Spek dan Sumber

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