IPB024N10N5ATMA1 vs IPB031N08N5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB024N10N5ATMA1 disebabkan oleh Infineon dan IPB031N08N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB024N10N5ATMA1 IPB031N08N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 N-Channel MOSFET (trench, shielded gate) OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID, TC=25C) 180 A —
Power Dissipation (PD, TC=25C) 250 W —
On-Resistance RDS(on) max @ VGS=10V 2.4 mΩ —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) value] —
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: Qg total gate charge] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total gate charge] [DATA_NEEDED: Qg total]
Input Capacitance Ciss [DATA_NEEDED: Ciss value] —
Output Capacitance Coss [DATA_NEEDED: Coss value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] —
Gambaran Suhu Operasi -55C to +175C (junction) -55 C to +175 C
Kemasan PG-TO263-7 (D2PAK-7) PG-TO263-3 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Aras MSL 1 (unlimited floor life at <30C/85% RH) [DATA_NEEDED: MSL rating]
Packaging Tape & Reel (13-inch reel) —
Boson Bebas Yes (per Infineon product family policy) —
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID) — 120 A (Tc)
Power Dissipation (PD) Max — 167 W (Tc)
On-Resistance (RDS(on)) Max — 3.1 mOhm (VGS=10V)
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) Typ — [DATA_NEEDED: VGS(th) typical]
Kiraan Pin — 3 (Gate, Drain, Source + Tab)
Tab Connection — Drain (electrically connected to pin)
Automotive Qualified — Yes (per Arrow listing)

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