IPB039N10N3GATMA1 vs IPB60R040CFD7ATMA1 Perbandingan

Perbandingan bersamaan detil IPB039N10N3GATMA1 dari Infineon dan IPB60R040CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPB039N10N3GATMA1 IPB60R040CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $5,19
FET Type N-Channel —
Technology MOSFET (Metal Oxide) Superjunction (SJ) N-Channel MOSFET
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 160 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C 214 W —
On-State Resistance RDS(on) at VGS=10V (typ) 3.9 mOhm —
Gate-Source Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Gate-Drain Charge (Qgd) [DATA_NEEDED: Qgd typ] —
Rentang Suhu Kerja -55C to +175C -55°C to +150°C
Paket PG-TO263-7 (D2PAK-7, 6 leads + tab) PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 1
RoHS / Halogen-Free Status RoHS compliant, halogen-free —
Series / Family OptiMOS 3 —
Manufacturer — Infineon Technologies
Product Family — CoolMOS CFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 50 A
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Dissipasi Listrik (TC=25°C) — 227 W
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Status RoHS — Compliant
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Spek dan Sumber

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