IPB039N10N3GATMA1 vs IPB60R040CFD7ATMA1 比較
詳細並排比較 IPB039N10N3GATMA1 由 Infineon 與 IPB60R040CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPB039N10N3GATMA1 - 100V 160A OptiMOS 3 N-Channel MOSFET | Infineon
IPB039N10N3GATMA1 ✓ 啟用中
規格比較
| 參數 | IPB039N10N3GATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $5.19 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | Superjunction (SJ) N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 160 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | 214 W | — |
| On-State Resistance RDS(on) at VGS=10V (typ) | 3.9 mOhm | — |
| Gate-Source Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd typ] | — |
| 工作溫度範圍 | -55C to +175C | -55°C to +150°C |
| 封裝 | PG-TO263-7 (D2PAK-7, 6 leads + tab) | PG-TO263-3-2 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | 1 |
| RoHS / Halogen-Free Status | RoHS compliant, halogen-free | — |
| Series / Family | OptiMOS 3 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| 功率耗散 (TC=25°C) | — | 227 W |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |