IPB073N15N5ATMA1 vs IPP075N15N3GXKSA1 Perbandingan
Perbandingan bersamaan detil IPB073N15N5ATMA1 dari Infineon dan IPP075N15N3GXKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPB073N15N5ATMA1 | IPP075N15N3GXKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 5 (superjunction trench) | N-Channel MOSFET (OptiMOS 3) |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at Tc=25°C | 114 A | — |
| On-Resistance RDS(on) max at VGS=10V | 7.3 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Power Dissition (PD) at Tc=25°C | 214 W | — |
| Paket | PG-TO263-3-2 (D2PAK-3L, surface mount) | PG-TO220-3 (TO-220 through-hole) |
| Tipe Mounting | Surface Mount (SMD) | Through Hole |
| Packaging | Tape and Reel (suffix ATMA1) | — |
| Rentang Suhu Kerja | -55°C to +175°C (junction) | [DATA_NEEDED: junction operating temperature range] |
| Configuration | Single N-channel, 3 pins (Gate, Drain, Source) | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL level] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Power Dissipation (PD, Tc=25C) | — | 300 W |
| On-State Resistance (RDS(on) max, VGS=10V) | — | 7.5 mOhm |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage absolute max] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Lead-Free / RoHS | — | RoHS Compliant |
| Ordering Code Suffix | — | GXKSA1 (Tube pack, RoHS compliant) |