IPB073N15N5ATMA1 vs IPP075N15N3GXKSA1 比較

詳細並排比較 IPB073N15N5ATMA1 由 Infineon 與 IPP075N15N3GXKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 - 150V 100A OptiMOS 3 Power MOSFET | Infineon

IPP075N15N3GXKSA1 ✓ 啟用中

規格比較

參數 IPB073N15N5ATMA1 IPP075N15N3GXKSA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Technology OptiMOS 5 (superjunction trench) N-Channel MOSFET (OptiMOS 3)
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 150 V 150 V
Continuous Drain Current (ID) at Tc=25°C 114 A —
On-Resistance RDS(on) max at VGS=10V 7.3 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Power Dissition (PD) at Tc=25°C 214 W —
封裝 PG-TO263-3-2 (D2PAK-3L, surface mount) PG-TO220-3 (TO-220 through-hole)
安裝類型 Surface Mount (SMD) Through Hole
Packaging Tape and Reel (suffix ATMA1) —
工作溫度範圍 -55°C to +175°C (junction) [DATA_NEEDED: junction operating temperature range]
Configuration Single N-channel, 3 pins (Gate, Drain, Source) —
RoHS 狀態 Compliant —
Lead-Free Yes —
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL level] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Continuous Drain Current (ID, Tc=25C) — 100 A
Power Dissipation (PD, Tc=25C) — 300 W
On-State Resistance (RDS(on) max, VGS=10V) — 7.5 mOhm
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage absolute max]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Lead-Free / RoHS — RoHS Compliant
Ordering Code Suffix — GXKSA1 (Tube pack, RoHS compliant)

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